Excimer laser liftoff of AlGaN/GaN HEMTs on thick AlN heat spreaders-猫眼课题宝

DOI：

10.1063/5.0064716

发表时间：

2021-09

期刊：

Applied Physics Letters

影响因子：

通讯作者：

中科院分区：

物理与天体物理2区

文献类型：

作者：

Md. Didarul Alam;M. Gaevski;M. Jewel;Shahab Mollah;A. Mamun;K. Hussain;Rich Floyd;G. Simin;M. Chandrashekhar;Asif Khan

我们报告了基于 193 nm 准分子激光的 Al0.26Ga0.74N/GaN 高电子迁移率晶体管 (HEMT) 的剥离 (LLO)，该晶体管具有生长在蓝宝石衬底上的厚 (t > 10 μm) AlN 散热缓冲层。使用厚的 AlN 散热层导致蓝宝石上制造的器件的热阻 (Rth) 为 16 K mm/W，低于不带散热器的蓝宝石上标准 HEMT 结构的~25-50 K mm/W 值。将 LLO 器件焊接到铜散热器上可将 Rth 进一步降低至 8 K mm/W，该值与已发布的块状 SiC 基板上的测量值相当。 LLO 和铜键合降低了 Rth，从而显着减少了自热和漏极电流下降。尽管载流子迁移率略有下降（~1800 至~1500 cm2/V s），但仍观察到漏极电流密度高达 0.9 A/mm。这是迄今为止报道的 LLO AlGaN/GaN HEMT 的最高漏极电流密度和迁移率。

We report on 193 nm excimer laser-based liftoff (LLO) of Al0.26Ga0.74N/GaN high electron mobility transistors (HEMTs) with thick (t > 10 μm) AlN heat spreading buffer layers grown over sapphire substrates. The use of the thick AlN heat spreading layer resulted in thermal resistance ( Rth) of 16 K mm/W for as-fabricated devices on sapphire, which is lower than the value of ∼25–50 K mm/W for standard HEMT structures on sapphire without the heat-spreaders. Soldering the LLO devices onto a copper heat sink led to a further reduction of Rth to 8 K mm/W, a value comparable to published measurements on bulk SiC substrates. The reduction in Rth by LLO and bonding to copper led to significantly reduced self-heating and drain current droop. A drain current density as high as 0.9 A/mm was observed despite a marginal reduction of the carrier mobility (∼1800 to ∼1500 cm2/V s). This is the highest drain current density and mobility reported to-date for LLO AlGaN/GaN HEMTs.

Excimer laser liftoff of AlGaN/GaN HEMTs on thick AlN heat spreaders

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