Comparative measurements of highly irradiated n-in-p and p-in-n 3D silicon strip detectors
Comparative measurements of highly irradiated n-in-p and p-in-n 3D silicon strip detectors
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DOI：
10.1016/j.nima.2011.08.041
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发表时间：
2011-12-11
影响因子：
1.4
通讯作者：
Preiss, Jens
中科院分区：
文献类型：
--
作者：
Koehler, Michael;Bates, Richard;Preiss, Jens
3D技术中的硅探测器是需要极端辐射硬度的环境中的应用的候选者，如在拟议的高亮度LHC中的探测器的最内层。在3D探测器中，电极由垂直于表面蚀刻到硅中的柱制成。与标准平面探测器相比，这导致更高的电场、更小的耗尽电压和降低的电荷载流子捕获概率。本文比较了辐照后n-in-p和p-in-n三维硅条探测器的信号和噪声。测试中的设备已经被辐照到每平方厘米2 x 10（16）1 MeV中子当量粒子（n（eq）/cm（2））的注量，这对应于高亮度LHC内部像素探测器层的预期注量。一个相对的电荷收集效率约为70%，即使在最高的辐照通量与两种检测器类型。不同温度对信号和噪声的影响进行了研究，退火测量的结果报告。(C)2011 Elsevier B. V.保留所有权利。
Silicon detectors in 3D technology are a candidate for applications in environments requiring an extreme radiation hardness, as in the innermost layers of the detectors at the proposed High-Luminosity LHC. In 3D detectors, the electrodes are made of columns etched into the silicon perpendicular to the surface. This leads to higher electric fields, a smaller depletion voltage and a reduced trapping probability of the charge carriers compared to standard planar detectors. In this article, the signal and the noise of irradiated n-in-p and p-in-n 3D silicon strip detectors are compared. The devices under test have been irradiated up to a fluence of 2 x 10(16) 1 MeV neutron equivalent particles per square centimetre (n(eq)/cm(2)), which corresponds to the fluence expected for the inner pixel detector layers at the High-Luminosity LHC. A relative charge collection efficiency of approximately 70% was obtained even after the highest irradiation fluence with both detector types. The influence of different temperatures on the signal and the noise is investigated and results of annealing measurements are reported. (C) 2011 Elsevier B.V. All rights reserved.