Domain Wall Pinning Sites Introduced by Focused Ion Beam in TbFeCo Film
Domain Wall Pinning Sites Introduced by Focused Ion Beam in TbFeCo Film
复制标题
聚焦离子束在 TbFeCo 薄膜中引入的畴壁钉扎位点
DOI：
10.1109/tmag.2012.2199741
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发表时间：
2012
影响因子：
2.1
通讯作者：
Akimitsu Morisako
中科院分区：
文献类型：
--
作者：
Songtian Li;Taro Amagai;Xiaoxi Liu;Akimitsu Morisako
提出了一种利用聚焦离子束在TbFeCo薄膜中引入钉扎位的方法。通过对光剂量聚焦离子束的间断扫描，在薄膜表面形成凸起，有效地提高了薄膜的矫直力。矫顽力随磁化密度的增加几乎呈线性增加，证实了磁化壁钉扎机制所预测的磁化磁化效应。与传统的刻蚀调整矫顽力的方法相比，本文提出的方法在减小聚焦离子束辐照对薄膜的磁性损伤方面具有优势。
A method of introducing pinning sites in TbFeCo film by the using of focused ion beam was presented. The formed bulges in the film surface by discontinuous scan of light-dose focused ion beam have been proved to enhance the film's coercivity effectively. Coercivity increases almost linearly with the bulge density, giving the evidence of pinning effect contributed from those bulges predicted by domain wall pinning mechanism. Compared with the traditional way of etching the film for adjusting the coercivity, the method presented here shows superiority on reducing magnetic damage to film caused by the focused ion beam irradiation.