Crystal Growth Simulation of BMO Nanorods in BMO-Doped REBCO Films with Seed layers
Crystal Growth Simulation of BMO Nanorods in BMO-Doped REBCO Films with Seed layers
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具有种子层的 BMO 掺杂 REBCO 薄膜中 BMO 纳米棒的晶体生长模拟
DOI：
10.1109/tasc.2021.3067437
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发表时间：
2021
影响因子：
1.8
通讯作者：
Yoshida Yutaka
中科院分区：
文献类型：
--
作者：
Ichino Yusuke;Tsuchiya Yuji;Yoshida Yutaka
BaMO_3（BMO）纳米棒在REBa_2Cu_3 O_y薄膜中的自组织作用对提高其在磁场中的超导性能具有重要意义。我们以前报道的控制BMO自组织使用种子层技术，其中包括低温生长（LTG）技术。在4.2K的磁场中，LTG技术可以获得高的BMO纳米棒数密度和优异的临界电流密度。为了阐明BMO纳米棒的自组织机制，我们开发了一个三维Monte Carlo模拟，并研究了种子层技术对BMO纳米棒生长的影响。结果表明，BMO纳米棒的数量密度的影响，在低沉积速率（vDR）和/或高衬底温度（Ts）沉积的种子层。此外，我们提出了一个生长动力学因子（R），包括VDR，Ts，和BMO体积分数。我们的模拟结果的数密度的影响R，因此，R是有用的预测BMO纳米棒的数密度。
The self-organization of BaMO3(BMO) nanorods in REBa2Cu3Oyfilms is important for enhancing the superconducting properties in magnetic fields. We previously reported the control of BMO self-organization using the seed layer technique, which included the low-temperature growth (LTG) technique. The LTG technique can achieve a high number density of BMO nanorods and excellent critical current density in magnetic fields at 4.2 K. To clarify the self-organization mechanism of BMO nanorods, we develop a three-dimensional Monte Carlo simulation and investigate the effect of the seed layer technique on the growth of BMO nanorods. Results show that the number density of BMO nanorods is affected by the seed layer deposited at a low deposition rate (vDR) and/or high substrate temperature (Ts). Moreover, we propose a growth kinetic factor (R) that includes vDR, Ts, and BMO volume fraction. Our simulation results of the number density are affected by R; therefore, Ris useful for predicting the number density of BMO nanorods.