High pressure magnetization measurements of BaNiSn3-type CeCuAl3
High pressure magnetization measurements of BaNiSn3-type CeCuAl3
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BaNiSn3 型 CeCuAl3 的高压磁化测量
DOI：
10.1016/j.jmmm.2006.12.001
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发表时间：
2007
期刊：
影响因子：
--
通讯作者：
N. Sato
中科院分区：
文献类型：
--
作者：
T. Nishioka;Y. Kawamura;H. Kato;M. Matsumura;K. Kodama;N. Sato
我们已经进行了磁化强度的测量下的压力高达7.4千巴的BaNiSn 3型CeCuAl 3。磁化率χ的温度依赖性表明在T0 ~ 2.5K处有一宽峰，T0与以前报道的Neel温度TNMR几乎相同.与压力对T NMR的强烈抑制相反，已发现T 0以0.02 K/kbar的速率随压力略微增加。为了统一解释这些结果，我们认为χ的宽峰应归因于近藤效应，而T0和TNMR在常压下恰好一致。
We have performed magnetization measurements under pressure up to 7.4 kbar for BaNiSn 3-type CeCuAl 3. The temperature dependence of the susceptibility χ indicates a broad peak at T 0∼ 2.5 K, where T 0 is nearly the same as the Neel temperature T NMR previously reported by NMR. Contrary to the strong suppression of T NMR by pressure, T 0 has been found to increase slightly with pressure at a rate of 0.02 K/kbar. In order to interpret these results consistently, we claim that the broad peak in χ should be attributed to Kondo effect, and T 0 and T NMR happen to coincide with each other at ambient pressure.