Proper Scaling of the Anomalous Hall Effect
Proper Scaling of the Anomalous Hall Effect
复制标题
异常霍尔效应的适当缩放
DOI：
10.1103/physrevlett.103.087206
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发表时间：
2009-08-21
影响因子：
8.6
通讯作者：
Jin, Xiaofeng
中科院分区：
文献类型：
--
作者：
Tian, Yuan;Ye, Li;Jin, Xiaofeng
利用铁外延薄膜，我们成功地独立控制了反常霍尔效应中不同的散射过程。这一结果清楚地暴露了在异常霍尔电阻率和纵向电阻率之间的常规标度rho(AH)=f（rho(xx)）的根本缺陷。建立了包含残余电阻率的新的标度rho(AH)=f(rho(xx),rho(xx))，有助于识别异常霍尔效应的内在和外在机制。
Working with epitaxial films of Fe, we succeeded in independent control of different scattering processes in the anomalous Hall effect. The result clearly exposed the fundamental flaws of the conventional scaling rho(AH)=f(rho(xx)) between the anomalous Hall resistivity and longitudinal resistivity. A new scaling rho(AH)=f(rho(xx0),rho(xx)) that also involves the residual resistivity has been established which helps identify the intrinsic and extrinsic mechanisms of the anomalous Hall effect.