Surface-Effect-Induced Optical Bandgap Shrinkage in GaN Nanotubes.
Surface-Effect-Induced Optical Bandgap Shrinkage in GaN Nanotubes.
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DOI：
10.1021/acs.nanolett.5b00924
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发表时间：
2015-06
期刊：
影响因子：
10.8
通讯作者：
Y. S. Park;Geunsik Lee;M. Holmes;Christopher C. S. Chan;B. Reid;J. Alexander-Webber;R. Nicholas
中科院分区：
文献类型：
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作者：
Y. S. Park;Geunsik Lee;M. Holmes;Christopher C. S. Chan;B. Reid;J. Alexander-Webber;R. Nicholas
我们研究了非平凡的表面效应对生长在Si衬底上的GaN纳米管的光学性质的影响。观察到的激子发射相对于体GaN的红移约100毫电子伏。我们发现，导带边主要是由表面原子占主导地位的，和更大的表面原子数的管可能会增加带宽，从而降低光学带隙。实验结果可以有重要的影响，在纳米结构的半导体与增强的表面/体积比的表面的作用的理解。
We investigate nontrivial surface effects on the optical properties of self-assembled crystalline GaN nanotubes grown on Si substrates. The excitonic emission is observed to redshift by ∼100 meV with respect to that of bulk GaN. We find that the conduction band edge is mainly dominated by surface atoms, and that a larger number of surface atoms for the tube is likely to increase the bandwidth, thus reducing the optical bandgap. The experimental findings can have important impacts in the understanding of the role of surfaces in nanostructured semiconductors with an enhanced surface/volume ratio.