Field enhancement of epsilon-near-zero modes in realistic ultrathin absorbing films
Field enhancement of epsilon-near-zero modes in realistic ultrathin absorbing films
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DOI：
10.1515/nanoph-2022-0816
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发表时间：
2023-03
期刊：
影响因子：
7.5
通讯作者：
A. Anopchenko;Sudip Gurung;Subhajit Bej;H. W. Lee
中科院分区：
文献类型：
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作者：
A. Anopchenko;Sudip Gurung;Subhajit Bej;H. W. Lee
摘要利用导电薄膜平均吸收功率的电动力学描述，给出了ε近零极化激元模引起的电场强度增强的表达式。我们发现，FIE达到一个极限，ENZ薄膜的ENZ损失的二次幂的倒数。这在通过原子层沉积生长的铝掺杂的氧化锌纳米层的示例性系列中示出。只有在不切实际的无损ENZ膜的情况下，FIE遵循由S预测的膜厚度的倒数二次幂。Campione等人[Phys. Rev. B，vol. 91，no. 12，art. 121408，2015]。我们还预测，FIE可以达到100，000的值在双极性半导体薄膜。这项工作是重要的建立等离子体激元场增强的限制和近零折射率光子学，非线性光学，热，量子光学的ENZ制度的发展。
Abstract Using electrodynamical description of the average power absorbed by a conducting film, we present an expression for the electric-field intensity enhancement (FIE) due to epsilon-near-zero (ENZ) polariton modes. We show that FIE reaches a limit in ultrathin ENZ films inverse of second power of ENZ losses. This is illustrated in an exemplary series of aluminum-doped zinc oxide nanolayers grown by atomic layer deposition. Only in a case of unrealistic lossless ENZ films, FIE follows the inverse second power of film thickness predicted by S. Campione, et al. [Phys. Rev. B, vol. 91, no. 12, art. 121408, 2015]. We also predict that FIE could reach values of 100,000 in ultrathin polar semiconductor films. This work is important for establishing the limits of plasmonic field enhancement and the development of near zero refractive index photonics, nonlinear optics, thermal, and quantum optics in the ENZ regime.