Devices and Circuits Using Novel 2-D Materials: A Perspective for Future VLSI Systems
Devices and Circuits Using Novel 2-D Materials: A Perspective for Future VLSI Systems
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DOI：
10.1109/tvlsi.2019.2914609
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发表时间：
2019-07-01
影响因子：
2.8
通讯作者：
De Micheli, Giovanni
中科院分区：
文献类型：
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作者：
Resta, Giovanni V.;Leonhardt, Alessandra;De Micheli, Giovanni
在这里，我们回顾了2-D电子领域的最新发展。我们首先关注2-D材料的合成，讨论目前可用的不同生长技术，并评估它们的优缺点。此外，我们描述了一个可能的路线图，使CMOS兼容集成的2-D材料。然后，我们将注意力转移到2-D器件和电路，并回顾最新技术水平。在众多器件概念中，我们仔细研究了用于低功耗应用的2-D隧道FET（TFFET）和负电容FET（NC-FET）。我们还特别强调使用静电掺杂来消除对物理或化学掺杂的需要的无掺杂极性可控系统。最后，我们与模拟的缩放设备的分析和讨论的可能性，使电路级的2-D电子。
Here, we review the most recent developments in the field of 2-D electronics. We focus first on the synthesis of 2-D materials, discussing the different growth techniques currently available and assessing their strengths and weaknesses. Moreover, we describe a possible roadmap to enable CMOS compatible integration of 2-D materials. We then shift our attention to 2-D devices and circuits and review the state of the art. Among the plethora of device concepts, we look closely at 2-D tunnel FETs (TFETs) and negative-capacitance FETs (NC-FETs) for low-power applications. We also put a particular emphasis on doping-free polarity-controllable systems that use electrostatic doping to eliminate the need for physical or chemical doping. We conclude with an analysis of simulations of scaled devices and discuss the possibilities enabled at circuit level by 2-D electronics.