Real time observation of reflectance anisotropy and reflection high-energy electron diffraction intensity oscillations during gas-source molecular-beam-epitaxy growth of Si and SiGe on Si(001).
Real time observation of reflectance anisotropy and reflection high-energy electron diffraction intensity oscillations during gas-source molecular-beam-epitaxy growth of Si and SiGe on Si(001).
复制标题
实时观察Si(001)上气源分子束外延生长Si和SiGe过程中的反射率各向异性和反射高能电子衍射强度振荡。
DOI：
10.1016/0022-0248(95)80093-r
复制
发表时间：
1995
影响因子：
8.6
通讯作者：
Taylor
中科院分区：
文献类型：
--
作者：
Turner;Pemble;Fernández;Joyce;Zhang;Taylor
