Stress Variations in TEOS‐Based SiO2 Films During Ex‐Situ Thermal Cycling
Stress Variations in TEOS‐Based SiO2 Films During Ex‐Situ Thermal Cycling
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TEOS 基 SiO2 薄膜在异位热循环过程中的应力变化
DOI：
10.1149/1.2220883
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发表时间：
1993
影响因子：
3.9
通讯作者：
A. N. Saxena
中科院分区：
文献类型：
--
作者：
K. Ramkumar;S. Ghosh;A. N. Saxena
研究了正硅酸乙酯（TEOS）化学气相沉积（CVD）法制备的SiO2薄膜在等时循环和等温循环过程中应力的变化。结果表明，在热循环过程中，SiO2薄膜中产生了明显的应力.此外，由O3基热CVD（ThCVD）沉积的SiO2膜与由等离子体交换CVD（PECVD）沉积的膜相比显示出更大的应力变化。最大应力在大约400 ° C的温度下产生，这对多层金属化技术具有重要意义。应力的观察到的变化解释的基础上建立在这些薄膜的内应力
The variations of stress in SiO 2 films, deposited by tetraethylorthosilicate (TEOS)-based chemical vapor deposition (CVD) processes, during isochronal and isothermal cycling was studied. It was found that significant stresses are developed in these SiO 2 films during thermal cycling. Further, the SiO 2 films deposited by the O 3 -based thermal CVD (ThCVD) exhibit much larger variations in stress as compared to the films deposited by plasma-exchanced CVD (PECVD). The maximum stress is developed at a temperature of about 400 o C which has significant implications on the multilevel metallization technologies. The observed variations of stress are explained on the basis of the intrinsic stresses built up in these films