Radiation hardness of pseudomorphic HEMT and dual-gate GaAs MES-FET MMICs
Radiation hardness of pseudomorphic HEMT and dual-gate GaAs MES-FET MMICs
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假晶 HEMT 和双栅极 GaAs MES-FET MMIC 的辐射硬度
DOI：
10.1109/radecs.1997.698865
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发表时间：
1997
期刊：
影响因子：
--
通讯作者：
K. Mizuguchi
中科院分区：
文献类型：
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作者：
K. Matsuzaki;N. Nemoto;E. Nakamura;T. Akutsu;S. Matsuda;K. Yajima;H. Sasaki;M. Komaru;T. Katoh;T. Kashiwa;T. Asano;K. Mizuguchi
研究了直流操作下 Co-60 /spl 伽马射线照射对两种类型的单片微波集成电路 (MMIC)、伪晶 HEMT (PHEMT) 和双栅 GaAs MES-FET 的影响。这两类MMIC具有超过10/sup 7/ rad(Si)的优异辐射硬度。我们认为 P-HEMT 和 MES-FET 的退化机制是二维电子气 (2DEG) 载流子密度的降低和肖特基栅电极附近电子陷阱的增加。
The effects of Co-60 /spl gamma/-ray irradiation under DC operation for two types of monolithic microwave integrated circuits (MMICs), Pseudomorphic HEMT (PHEMT) and Dual-Gate GaAs MES-FET, were investigated. These two types of MMICs have an excellent radiation hardness exceeding 10/sup 7/ rad(Si). We considered that degradation mechanisms of P-HEMT and MES-FET were the decrease of two dimensional electron gas (2DEG) carrier density and increase of electron traps near the Schottky gate electrode.