The 2020 UV emitter roadmap
The 2020 UV emitter roadmap
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DOI：
10.1088/1361-6463/aba64c
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发表时间：
2020-12-09
影响因子：
3.4
通讯作者：
Zhang, Yuewei
中科院分区：
文献类型：
--
作者：
Amano, Hiroshi;Collazo, Ramon;Zhang, Yuewei
与传统的紫外线光源相比，固态紫外线发射器具有许多优点。（Al,In,Ga）N材料系统最适合生产从400 nm到210 nm的LED和激光二极管，因为它具有大且可调谐的直接带隙，N和p掺杂能力，可达到最大带隙材料AlN，并且生长和制造技术与当前可见的基于ingan的LED生产兼容。然而，与可见的同类产品相比，基于AlGaN的紫外线发射器仍然面临许多挑战，这些挑战在考虑其光输出功率、工作电压和长期稳定性时变得最为明显。这些挑战大多与材料的大带隙有关。然而，自20世纪70年代首次实现紫外线电致发光以来的发展表明，理解和技术的改进使得紫外线发射器的性能远远超出了目前的状态。一个例子是最近实现的边缘发射激光二极管，在UVC中发射271.8 nm，在UVB光谱范围内发射298 nm。该路线图总结了UV发射器最重要方面的当前技术状况，它们面临的挑战，并提供了未来发展的展望。
Solid state UV emitters have many advantages over conventional UV sources. The (Al,In,Ga)N material system is best suited to produce LEDs and laser diodes from 400 nm down to 210 nm-due to its large and tuneable direct band gap, n- and p-doping capability up to the largest bandgap material AlN and a growth and fabrication technology compatible with the current visible InGaN-based LED production. However AlGaN based UV-emitters still suffer from numerous challenges compared to their visible counterparts that become most obvious by consideration of their light output power, operation voltage and long term stability. Most of these challenges are related to the large bandgap of the materials. However, the development since the first realization of UV electroluminescence in the 1970s shows that an improvement in understanding and technology allows the performance of UV emitters to be pushed far beyond the current state. One example is the very recent realization of edge emitting laser diodes emitting in the UVC at 271.8 nm and in the UVB spectral range at 298 nm. This roadmap summarizes the current state of the art for the most important aspects of UV emitters, their challenges and provides an outlook for future developments.