Effect of the hydrophobicity and thickness of polymer gate dielectrics on the hysteresis behavior of pentacene-based field-effect transistors
Effect of the hydrophobicity and thickness of polymer gate dielectrics on the hysteresis behavior of pentacene-based field-effect transistors
复制标题
DOI：
10.1063/1.3131664
复制
发表时间：
2009-05
影响因子：
3.2
通讯作者：
Se Hyun Kim;Sooji Nam;Jaeyoung Jang;K. Hong;Chanwoo Yang;D. Chung;Chan Eon Park;Woon-Seop Choi
中科院分区：
文献类型：
--
作者：
Se Hyun Kim;Sooji Nam;Jaeyoung Jang;K. Hong;Chanwoo Yang;D. Chung;Chan Eon Park;Woon-Seop Choi
我们证明了起源和机制的滞后行为，经常观察到的操作过程中的有机场效应晶体管（OFFERS）的基础上聚合物栅双极晶体管。虽然极性官能团，如羟基，存在于聚合物栅极电致伸缩器是已知的，以诱导滞后，只有少数详细的调查研究如何在聚合物表面，形成与半导体层的界面，并在散装的存在下，这样的终端功能的影响滞后。在这项研究中，我们控制的聚合物的疏水性，通过改变羟基的数量，并使用一个dielectric聚合物/SiO2双层和一个厚的单一的聚合物作为栅极电介质结构，使滞后行为分为贡献的羟基存在于聚合物表面和散装，分别。在真空（10 - 3 Torr）和环境空气（相对湿度0. 5 Pa）中进行的OFFEs的电气特性。
We demonstrate the origin and mechanism of the hysteresis behavior that is frequently observed during the operation of organic field-effect transistors (OFETs) based on polymer gate dielectrics. Although polar functionalities, such as hydroxyl groups, present in the polymer gate dielectrics are known to induce hysteresis, there have only been a few detailed investigations examining how the presence of such end functionalities both at the polymer surface—forming an interface with the semiconductor layer—and in the bulk influences the hysteresis. In this study, we control the hydrophobicity of the polymer by varying the number of hydroxyl groups, and use an ultrathin polymer/SiO2 bilayer and a thick single polymer as the gate dielectric structure so that the hysteresis behavior is divided into contributions from hydroxyl groups present at the polymer surface and in the bulk, respectively. Electrical characterizations of the OFETs, performed both in vacuum (≈10−3 Torr) and in ambient air (relative humidity o...