The multi-photon induced Fano effect.

The multi-photon induced Fano effect.
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DOI:
10.1038/s41467-020-20534-0
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发表时间:
2021-01-19
影响因子:
16.6
通讯作者:
Murdin BN
Murdin BN
中科院分区:
综合性期刊1区
文献类型:
--
作者:
Litvinenko KL;Le NH;Redlich B;Pidgeon CR;Abrosimov NV;Andreev Y;Huang Z;Murdin BN

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普通的法诺效应发生在多电子原子中,需要一个自电离态。在这种状态下,光电离可以通过干扰的途径进行,并且特征不对称共振结构出现在连续体中。在这里,我们证明了Fano结构也可以诱导,而不需要自电离,通过一个普通的束缚态在任何原子的耦合激光打扮的连续。使用多光子过程可以对干涉进行完全的超快速控制。我们表明,线形指数q接近统一(最大不对称性)可能会产生在类氢硅施主与一个相对较弱的光束。由于Fano线形具有相长干涉和相消干涉,激光控制打开了状态选择性检测的可能性,在共振的一侧增强,另一侧不可见。我们讨论了各种原子和分子光谱,并在硅供体的情况下,我们提供了一个量子位读出应用程序的计算。Fano共振发生在许多具有自电离态的平台中。本文作者用泵浦-探测方法证明了在具有显著屏蔽的Si:P系统中,多光子Fano共振不需要自电离态。
The ordinary Fano effect occurs in many-electron atoms and requires an autoionizing state. With such a state, photo-ionization may proceed via pathways that interfere, and the characteristic asymmetric resonance structures appear in the continuum. Here we demonstrate that Fano structure may also be induced without need of auto-ionization, by dressing the continuum with an ordinary bound state in any atom by a coupling laser. Using multi-photon processes gives complete, ultra-fast control over the interference. We show that a line-shape index q near unity (maximum asymmetry) may be produced in hydrogenic silicon donors with a relatively weak beam. Since the Fano lineshape has both constructive and destructive interference, the laser control opens the possibility of state-selective detection with enhancement on one side of resonance and invisibility on the other. We discuss a variety of atomic and molecular spectroscopies, and in the case of silicon donors we provide a calculation for a qubit readout application. Fano resonances occur in many platforms that have auto-ionizing states. Here the authors show that auto-ionizing states are not required for multi-photon Fano resonance in a Si:P system with significant screening by using a pump-probe method.
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