Pt Etching Method at Low Temperature Using Electrolyzed Sulfuric Acid Solution
Pt Etching Method at Low Temperature Using Electrolyzed Sulfuric Acid Solution
复制标题
使用电解硫酸溶液的低温铂蚀刻方法
DOI：
10.4028/www.scientific.net/ssp.219.101
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发表时间：
2014
期刊：
影响因子：
--
通讯作者：
H. Morita
中科院分区：
文献类型：
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作者：
Yuichi Ogawa;M. Uchida;Toru Otsu;T. Nagai;H. Morita
近来，在半导体制造工业中，采用具有高导电性的NiPt硅化物。然而，当在NiPt硅化物处理中去除NiPt残留物时，有可能损坏其他金属和硅化物。清除残留物质时必须特别小心。作为常规方法，Chur [1]已经报道了SPM处理。然而，当Pt含量为10%或更高时，在该方法中，晶片必须在150°C下长时间处理。然后，该方法可能损坏金属栅极和硅化物。作为另一种方法，可以使用王水。然而，在该方法中，溶解NiPt需要很长时间。本文报道了一种新开发的Pt腐蚀方法，即ESA（电解硫酸）和HCl一步腐蚀法，以及在HNO_3和H_2O_2混合液后ESA和HCl混合液两步腐蚀法。该方法可以在比常规方法更短的时间内在更低的温度下处理NiPt硅化物。
Recently, in the semiconductor manufacturing industry, NiPt silicide with high conductivity is adopted. However, when removing the NiPt residues in NiPt silicide processing, there is a possibility to damage other metals and silicide. Removal of residual substances must be done with special care. As a conventional method, processing by SPM has been reported by Chur [1]. However, when Pt content is 10% or more, in this method, the wafers must be processed at 150°C for a long period of time. Then, this method may damage a metal gate and silicide. As another method, aqua regia can be used. However, in this method, it takes long time to dissolve NiPt. This paper reports, newly develped Pt etching method using one-step processing of ESA (Electrolyzed Sulfuric Acid) and HCl, and two-step processing using ESA and HCl mixture after HNO3 and H2O2 mixture. This method can treat NiPt silicide at lower temperature within a shorter time than in conventional methods.