Superconductivity in planarised nanocrystalline diamond films.
Superconductivity in planarised nanocrystalline diamond films.
复制标题
DOI：
10.1080/14686996.2017.1286223
复制
发表时间：
2017
影响因子：
5.5
通讯作者：
Williams OA
中科院分区：
文献类型：
--
作者：
Klemencic GM;Mandal S;Werrell JM;Giblin SR;Williams OA
将CVD生长的掺硼金刚石膜抛光至2nm RMS的表面粗糙度。薄膜的超导特性不受抛光过程的影响。化学气相沉积法（CVD）生长的掺硼纳米金刚石（B-NCD）由于其高的杨氏模量而成为高频超导纳机电系统（NEMS）的理想材料。由于柱状生长机制，所生长的膜具有随膜厚度增加的表面粗糙度。为了减少B-NCD NEMS中的固有损耗，通过抛光来校正这种表面粗糙度是至关重要的。在本文中，与常规抛光相比，证明了通过化学机械抛光（CMP）可以在14小时内将520 nm厚的B-NCD膜的均方根（RMS）粗糙度从44.0 nm减小到1.5 nm，而不会损坏样品或引入超导转变温度的显著变化。从而使得B-NCD膜能够用于制造高质量的超导NEMS。
A CVD-grown boron-doped diamond film was polished to a surface roughness of 2 nm RMS. The superconducting properties of the film are unchanged by the polishing process. Chemical vapour deposition (CVD) grown boron-doped nanocrystalline diamond (B-NCD) is an attractive material for the fabrication of high frequency superconducting nanoelectromechanical systems (NEMS) due to its high Young’s modulus. The as-grown films have a surface roughness that increases with film thickness due to the columnar growth mechanism. To reduce intrinsic losses in B-NCD NEMS it is crucial to correct for this surface roughness by polishing. In this paper, in contrast to conventional polishing, it is demonstrated that the root-mean-square (RMS) roughness of a 520 nm thick B-NCD film can be reduced by chemical mechanical polishing (CMP) from 44.0 nm to 1.5 nm in 14 hours without damaging the sample or introducing significant changes to the superconducting transition temperature, , thus enabling the use of B-NCD films in the fabrication of high quality superconducting NEMS.