Direct demonstration of a misfit strain‐generated electric field in a [111] growth axis zinc‐blende heterostructure
Direct demonstration of a misfit strain‐generated electric field in a [111] growth axis zinc‐blende heterostructure
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直接演示 [111] 生长轴锌共混物异质结构中失配应变产生的电场
DOI：
10.1063/1.102729
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发表时间：
1990
影响因子：
4
通讯作者：
L. Eastman
中科院分区：
文献类型：
--
作者：
E. Caridi;T. Chang;K. Goossen;L. Eastman
我们报告了在（111）取向应变层异质结构中应变产生的内建电场的首次直接演示。我们提出了一个模型，描述了在晶格-错配量子阱中错配应变的调节，以及通过压电效应产生的纵向电场。在（111）B GaAs衬底上，我们在p - i - n二极管的本质区培养了量子阱，使得量子阱中应变产生的电场与二极管较弱的内建电场相反。在反向偏置操作下，光电导率测量显示量子阱电吸收峰的二次蓝移，而不是在量子受限Stark效应中通常观察到的红移。测量到的蓝移显示电场强度为1.7×105 V/cm，与理论一致，在被测样品特性的精度范围内。
We report the first direct demonstration of a strain‐generated built‐in electric field in a (111) oriented strained‐layer heterostructure. We present a model which describes the accommodation of the misfit strain in a lattice‐mismatched quantum well, and the resulting generation of a longitudinal electric field via the piezoelectric effect. On a (111)B GaAs substrate, we grew the quantum well in the intrinsic region of a p‐i‐n diode such that the strain‐generated electric field in the quantum well opposes the weaker built‐in electric field of the diode. Under reverse bias operation, photoconductivity measurements show a quadratic blue shift of the quantum well electroabsorption peaks, in contrast to the red shifts normally observed in the quantum‐confined Stark effect. The measured blue shifts demonstrate an electric field strength of 1.7×105 V/cm, which agrees with theory to within the accuracy of the measured sample characteristics.