EFFECTS OF MICROSCOPIC FLUCTUATIONS IN DOPANT DISTRIBUTIONS ON MOSFET THRESHOLD VOLTAGE
EFFECTS OF MICROSCOPIC FLUCTUATIONS IN DOPANT DISTRIBUTIONS ON MOSFET THRESHOLD VOLTAGE
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DOI：
10.1109/16.123489
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发表时间：
1992-03-01
影响因子：
3.1
通讯作者：
WADA, T
中科院分区：
文献类型：
--
作者：
NISHINOHARA, K;SHIGYO, N;WADA, T
利用器件模拟，研究了掺杂剂分布的波动对MOSFET阈值电压的影响及其对尺度的依赖性。 模拟结果表明，掺杂分布的微观波动不仅会引起阈值电压的偏差，而且会降低阈值电压的平均值。 还发现阈值电压偏差主要受衬底表面处的掺杂剂分布波动的影响，而不是整个耗尽层。 结合表面电势的微观波动，由于波动的掺杂剂分布的讨论，不仅解释了偏差，但也在模拟中的阈值电压的平均值降低。
The effects of fluctuations in dopant distribution on the MOSFET threshold voltage and their dependence on the scaling were investigated, using device simulation. The simulation indicates that the microscopic fluctuations in dopant distribution not only induces threshold-voltage deviations, but also lowers the mean threshold-voltage value. It was also found that the threshold-voltage deviation is mostly affected by fluctuating dopant distribution at the substrate surface, rather than throughout the depletion layer. Discussion incorporating microscopic fluctuations in surface electric potential, due to fluctuating dopant distribution, explained not only deviations but also the mean value lowering of the threshold voltage in the simulation.