Determination of trace silicon in ultra-high-purity water by inductively coupled plasma mass spectrometry
Determination of trace silicon in ultra-high-purity water by inductively coupled plasma mass spectrometry
复制标题
电感耦合等离子体质谱法测定超高纯水中的痕量硅
DOI：
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发表时间：
1994
期刊：
影响因子：
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通讯作者：
T. Shimamura
中科院分区：
文献类型：
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作者：
Y. Takaku;K. Masuda;Takako Takahashi;T. Shimamura
采用高分辨率电感耦合等离子体质谱(HR-ICP-MS)测定超高纯水中痕量硅。仪器背景，特别是从等离子体炬是一个严重的问题。为了克服这一问题，采用了仔细的预浓缩程序。这一过程允许极好的量化，低至低于NG L-1的水平。无论硅的化学状态如何，都可以得到总的硅浓度。因此，通过从总硅中减去由比色分析测定的离子硅，可以获得非离子硅的浓度。半导体级水样中的总硅浓度水平在0.5到1.0 ng g-1之间。
Determination of trace levels of Si in ultra-high-purity water was performed by high-resolution inductively coupled plasma mass spectrometry (HR-ICP-MS). Instrumental background, especially from the plasma torch is a serious problem. To overcome this problem a careful preconcentration procedure was adopted. This procedure allows excellent quantification down to sub-ng l–1 level. Total Si concentration is obtained regardless of the chemical state of Si. Consequently, by subtracting ionic Si, determined by colorimetric analysis, from total Si, it may be possible to obtain the concentration of non-ionic Si. Total Si concentration levels in semiconductor-grade water samples ranged from 0.5 to 1.0 ng g–1.