Room Temperature Ferromagnetism in Si-Doped GaN Powders
Room Temperature Ferromagnetism in Si-Doped GaN Powders
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DOI：
10.1166/sam.2014.1710
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发表时间：
2014-02
影响因子：
0.9
通讯作者：
R. Ababakri;B. Song;G. Wang;Zh Zhang;R. Wu;J. Li;J. Jian
中科院分区：
文献类型：
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作者：
R. Ababakri;B. Song;G. Wang;Zh Zhang;R. Wu;J. Li;J. Jian
在NH3气氛下，采用Ga 2 O3直接氮化法制备了未掺杂和Si掺杂的GaN粉末。能量色散X射线谱、X射线衍射和X射线光电子能谱表明Si原子成功地掺入GaN晶格并取代Ga原子。扫描电子显微镜、拉曼散射和光致发光分析表明，Si的掺杂使样品中的晶粒尺寸减小，缺陷增多。在Ga_（1-x）SixN粉末中观察到室温铁磁性，其随Si含量的增加而增强。提出了缺陷、氧杂质和Si掺杂对决定Si掺杂GaN粉末中长程磁序的重要作用。
Un-doped and Si-doped GaN powders were prepared by direct nitridation of Ga2O3 under NH3 atmosphere. Energy-dispersive X-ray spectroscopy, X-ray diffraction and X-ray photoemission spectroscopy indicate that Si atoms are successfully incorporated into GaN lattices and substitute for Ga atoms. Scanning electron microscopy, Raman scattering and photoluminescence demonstrate that the Si doping results in the decrease of crystalline sizes and the increase of defects in the samples. The room temperature ferromagnetism is observed in the Ga1-xSixN powders which is enhanced with increasing Si content. It is proposed that the defects, oxygen impurity and Si dopants play important roles to determine the long-range magnetic order in the Si-doped GaN powders.