Physical and electrical characteristics of HfN gate electrode for advanced MOS devices
Physical and electrical characteristics of HfN gate electrode for advanced MOS devices
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DOI：
10.1109/led.2003.812143
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发表时间：
2003-06
影响因子：
4.9
通讯作者：
H. Yu;H.F. Lim;J.H. Chen;M. Li;Chunxiang Zhu;C. Tung;A. Du;W.D. Wang;D. Chi;D. Kwong
中科院分区：
文献类型：
--
作者：
H. Yu;H.F. Lim;J.H. Chen;M. Li;Chunxiang Zhu;C. Tung;A. Du;W.D. Wang;D. Chi;D. Kwong
在这封信中，物理气相沉积（PVD）氮化铪（HfN）的物理和电气性能的研究首次作为先进的MOS器件应用的金属栅电极。结果表明，HfN在TaN/HfN/SiO/sub 2//SiMOS结构中具有中等带隙功函数. TaN/HfN叠层金属栅MOS电容器在高温处理（高达1000 /spl deg/C）后，其等效氧化层厚度（EOT）、漏电流和功函数的变化可以忽略不计，证明了HfN金属栅在SiO/sub 2/上具有优异的热稳定性。我们的研究结果表明，HfN金属电极是一个理想的候选人，为全耗尽SOI和/或对称双栅MOS器件的应用。
In this letter, the physical and electrical properties of physical vapor deposited (PVD) hafnium nitride (HfN) is studied for the first time as the metal gate electrode for advanced MOS devices applications. It is found that HfN possesses a midgap work function in tantalum nitride (TaN)/HfN/SiO/sub 2//Si MOS structures. TaN/HfN stacked metal-gated MOS capacitors exhibit negligible variations on equivalent oxide thickness (EOT), leakage current, and work function upon high-temperature treatments (up to 1000 /spl deg/C), demonstrating the excellent thermal stability of HfN metal gate on SiO/sub 2/. Our results suggest that HfN metal electrode is an ideal candidate for the fully depleted SOI and/or symmetric double gate MOS devices application.