Transient behavior of infrared photoconductors: application of a numerical model.
Transient behavior of infrared photoconductors: application of a numerical model.
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红外光电导体的瞬态行为：数值模型的应用。
DOI：
10.1364/ao.38.001910
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发表时间：
1999
期刊：
影响因子：
1.9
通讯作者：
J. Beeman
中科院分区：
文献类型：
--
作者：
N. Haegel;J. Simões;A. White;J. Beeman
外在光电导体瞬态响应的数值模型应用于 Ge:Ga 和 GaAs:Te 探测器的行为。光电导体对光照变化表现出双分量响应。研究了慢分量的特征时间和幅度作为背景通量、应用场、温度、器件长度和信号大小的函数。对于大信号应用，即使信号比背景大几个数量级，背景通量也会影响瞬态响应。实验结果旨在支持建模的关键预测。由于快成分与慢成分的比率与背景和信号大小无关，因此我们建议探测器的操作方式是从快成分中得出最终信号水平。
A numerical model for the transient response of extrinsic photoconductors is applied to the behavior of Ge:Ga and GaAs:Te detectors. Photoconductors display a two-component response to changes in illumination. The characteristic time and magnitude for the slow component have been studied as a function of background flux, applied field, temperature, device length, and signal size. For large-signal applications, the background flux affects the transient response even when the signal is orders of magnitude greater than the background. Experimental results are presented to support key predictions of the modeling. Because the ratio of fast to slow components is independent of both background and signal size, we propose the operation of detectors in such a way that final signal levels are derived from the fast component.