Contactless DC Connector Based on GaN LLC Converter for Next-Generation Data Centers
Contactless DC Connector Based on GaN LLC Converter for Next-Generation Data Centers
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DOI:
10.1109/tia.2014.2387481
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发表时间:
2015-01
影响因子:
4.4
通讯作者:
Y. Hayashi;H. Toyoda;T. Ise;A. Matsumoto
中科院分区:
文献类型:
--
作者:
Y. Hayashi;H. Toyoda;T. Ise;A. Matsumoto
An inductively coupled contactless dc connector has been proposed for the next-generation 380-V dc distribution system in data centers. A LLC resonant dc-dc converter topology with gallium nitride (GaN) power transistors has been applied to realize the short-distance highly efficient contactless power transfer. A prototype of a 1.2-kW 384- to 192-V connector has been fabricated and the conversion efficiency of over 95% with the power density of 8.1 W/cm3 has been confirmed experimentally under 1000-kHz operation. The design consideration has been carried out and the potential to achieve 10.0 W/cm3 has been also shown taking the feature of the GaN power device and the characteristics of the magnetic core material for the transformer into account. The contactless dc connector integrates the functioning of an isolated dc-dc converter into a connector for space saving, and the dc current can be cut off without arc because of the inductive coupling. The proposed connector contributes to realizing a highly efficient, space saving, and reliable future 380-V dc distribution system.