(11-22) semipolar InGaN emitters from green to amber on overgrown GaN on micro-rod templates
(11-22) semipolar InGaN emitters from green to amber on overgrown GaN on micro-rod templates
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DOI：
10.1063/1.4939132
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发表时间：
2015-12-28
影响因子：
4
通讯作者：
Wang, T.
中科院分区：
文献类型：
--
作者：
Bai, J.;Xu, B.;Wang, T.
我们在绿色、黄绿色、黄色和琥珀色光谱区域展示了半极InGaN单量子阱发光二极管(LED)。LED是在我们生长的单极(11-22)GaN微棒阵列模板上生长的，而微棒阵列模板是在m面蓝宝石上生长的(11-22)GaN上生长的。对(11-22)绿色LED的电致发光测量表明，与商业参考C面LED相比，随着驱动电流的增加，发射波长的蓝移减小。黄绿色和黄色LED的蓝移也显著减少。所有这些都表明在我们的(11-22)发光二极管中有效地抑制了量子受限斯塔克效应。晶片上的测量结果显示，光输出与电流呈线性增长，外部量子效率表明，与商业c平面LED相比，效率下降有显著改善。电致发光偏振测量表明，我们的半极LED的偏振率约为25%。(C)2015 AIP出版有限责任公司。
We demonstrate semipolar InGaN single-quantum-well light emitting diodes (LEDs) in the green, yellow-green, yellow and amber spectral region. The LEDs are grown on our overgrown semipolar (11-22) GaN on micro-rod array templates, which are fabricated on (11-22) GaN grown on m-plane sapphire. Electroluminescence measurements on the (11-22) green LED show a reduced blue-shift in the emission wavelength with increasing driving current, compared to a reference commercial c-plane LED. The blue-shifts for the yellow-green and yellow LEDs are also significantly reduced. All these suggest an effective suppression in quantum confined Stark effect in our (11-22) LEDs. On-wafer measurements yield a linear increase in the light output with the current, and external quantum efficiency demonstrates a significant improvement in the efficiency-droop compared to a commercial c-plane LED. Electro-luminescence polarization measurements show a polarization ratio of about 25% in our semipolar LEDs. (C) 2015 AIP Publishing LLC.