Advanced CMOS technologies for ultra-low power logic and AI applications

Advanced CMOS technologies for ultra-low power logic and AI applications
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DOI：
10.1109/edtm50988.2021.9420870
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发表时间：
2021-04
期刊：
2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
影响因子：
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通讯作者：
S. Takagi;Kasidit Toprascrtpong;Kimihiko Kato;K. Sumita;E. Nako;R. Nakane;K. Jo;M. Takenaka
S. Takagi;Kasidit Toprascrtpong;Kimihiko Kato;K. Sumita;E. Nako;R. Nakane;K. Jo;M. Takenaka
中科院分区：
其他
文献类型：
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作者：
S. Takagi;Kasidit Toprascrtpong;Kimihiko Kato;K. Sumita;E. Nako;R. Nakane;K. Jo;M. Takenaka

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我们提出了各种基于MOS的器件技术，用于实现标准逻辑功能和新AI应用的高性能和低功耗电路。介绍了高迁移率绝缘体上沟道技术、新型异质结构TFFET和HfZrO FeFET技术以及FeFET在油藏计算中的应用。
We present a variety of MOS-based device technologies for realizing high performance and low power circuits for standard logic functions and new AI applications. High mobility channel-on-insulator technologies, new hetero-structure TFETs and HfZrO FeFET technologies and an application of the FeFETs to reservoir computing are introduced on a basis of our recent research activities.