Defect-creation effects on abnormal on-current under drain bias illumination stress in a-IGZO thin-film transistors
Defect-creation effects on abnormal on-current under drain bias illumination stress in a-IGZO thin-film transistors
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DOI：
10.1016/j.sse.2019.107752
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发表时间：
2020-03-01
影响因子：
1.7
通讯作者：
Kim, Ohyun
中科院分区：
文献类型：
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作者：
Ha, Tae-Kyoung;Kim, Yongjo;Kim, Ohyun
非晶InGaZnO薄膜晶体管的导通电流I-ON和场效应迁移率μ（FE）在漏极偏压光照应力（DBIS）的作用下发生异常变化。首先，I-ON下降到其初始值的35%，并且mu（FE）从11.8 cm（2）/（V.s）下降到3.0 cm（2）/（V.s），这是由于在漏区附近通过弱氧键断裂产生的类受主尾态A（TAIL）。A（TAIL）捕获电子，因此具有负电荷，这导致带电载流子的散射和mu（FE）的降低。随着DBIS时间的流逝，在漏极区附近产生电离氧空位（V-O（2+）），因此I-ON重新升高到其下降值的1.57倍（即，到其初始值的55%）; mu（FE）从3.0 cm（2）/（V.s）增加到6.9 cm（2）/（V.s）（即，原产地价值的59%）;。这种补偿效应发生在A（TAIL）和V-O（2+）同时出现的情况下，因此V-O（2+）在漏区附近的产生是引起再升高的主要原因。
On-current I-ON and field effect mobility mu(FE) changed abnormally by drain bias illumination stress (DBIS) in amorphous InGaZnO thin-film transistors. First, I-ON dropped to 35% of its initial value and mu(FE) decreased from 11.8 cm(2)/(V.s) to 3.0 cm(2)/(V.s) because of acceptor-like tail states A(TAIL), which were generated by rupture of weak oxygen bonds near the drain region. The A(TAIL) trap electrons, and therefore have negative charge, which causes scattering of charged carriers and decrease in mu(FE). As DBIS time elapsed, ionized oxygen vacancies (V-O(2+)) were generated near the drain region, so I-ON was re-elevated to 1.57 times as high as its dropped value (i.e., to 55% of its initial value); mu(FE) increased from 3.0 cm(2)/(V.s) to 6.9 cm(2)/(V.s) (i.e., to 59% of its origin value);. These compensation effects happened when A(TAIL) and V-O(2+) occurred in the same place, so generation of V-O(2+) near drain region was the main cause of the re-elevation.