1.4 million Q factor Si3N4 micro-ring resonator at 780 nm wavelength for chip-scale atomic systems.
1.4 million Q factor Si3N4 micro-ring resonator at 780 nm wavelength for chip-scale atomic systems.
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DOI：
10.1364/oe.381224
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发表时间：
2020-01
期刊：
影响因子：
3.8
通讯作者：
Martin Sinclair;K. Gallacher;M. Sorel;J. Bayley;E. McBrearty;R. Millar;S. Hild;D. Paul
中科院分区：
文献类型：
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作者：
Martin Sinclair;K. Gallacher;M. Sorel;J. Bayley;E. McBrearty;R. Millar;S. Hild;D. Paul
在硅衬底上制作了一个氮化硅微环谐振器，在780 nm波长处的加载Q值为1.4 × 106。这是由于通过优化波导侧壁相互作用和顶部包层折射率实现的低传播损耗波导。潜在的应用包括激光频率稳定，允许芯片级原子系统在780.24 nm处靶向87 Rb原子跃迁。微环的温度相关波长偏移被确定为13.1 pm/K，表明对于波长锁定应用，这种器件需要小于±15 mK的最小温度稳定性。如果使用优化厚度的聚氨酯丙烯酸酯顶部包层，则微环可以有效地是无热的，从而导致潜在设备的占地面积、功耗和成本降低。
A silicon nitride micro-ring resonator with a loaded Q factor of 1.4 × 106 at 780 nm wavelength is demonstrated on silicon substrates. This is due to the low propagation loss waveguides achieved by optimization of waveguide sidewall interactions and top cladding refractive index. Potential applications include laser frequency stabilization allowing for chip-scale atomic systems targeting the 87Rb atomic transition at 780.24 nm. The temperature dependent wavelength shift of the micro-ring was determined to be 13.1 pm/K indicating that a minimum temperature stability of less than ±15 mK is required for such devices for wavelength locking applications. If a polyurethane acrylate top cladding of an optimized thickness is used then the micro-ring could effectively be athermal, resulting in reduced footprint, power consumption, and cost of potential devices.