Mechanical model of single abrasive during chemical mechanical polishing: Molecular dynamics simulation
Mechanical model of single abrasive during chemical mechanical polishing: Molecular dynamics simulation
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DOI：
10.1016/j.triboint.2018.12.018
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发表时间：
2019-05
影响因子：
6.2
通讯作者：
Ruling Chen;Shaoxian Li;Zhe Wang;Xinchun Lu
中科院分区：
文献类型：
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作者：
Ruling Chen;Shaoxian Li;Zhe Wang;Xinchun Lu
通过分子动力学模拟对硅基底、二氧化硅团簇和聚氨酯垫之间的负载过程进行了模拟。结果表明，由于垫原子的流动性较强，团簇与垫之间的相互作用力在低负载阶段不随工作压力的变化而变化。但在高负载阶段，由于垫流动性降低，相互作用力会随着工作压力的增加而增加。这些表明，在化学机械抛光（CMP）工艺中，随着工作压力的增加，磨料和抛光垫之间的接触状态将从弹性接触变为塑性接触。最后，建立了不同载荷下单一磨料CMP过程的统一力学模型。
The loading process among the silicon substrate, silica cluster and polyurethane pad was performed by molecular dynamics simulations. The results showed that the interaction force between the cluster and pad did not change with the working pressure at low load stage due to strong fluidity of pad atoms. But at high load stage, the interaction force would increase with increase of the working pressure owing to the reduction of pad fluidity. These demonstrate that the contact status between the abrasives and pad will change from an elastic contact to plastic contact with increase of working pressure for a chemical mechanical polishing (CMP) process. Finally, a unified mechanical model for the single abrasive during CMP under different loads was established.