Thermal impact of an active 3-D microelectrode array implanted in the brain
Thermal impact of an active 3-D microelectrode array implanted in the brain
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DOI：
10.1109/tnsre.2007.908429
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发表时间：
2007-12-01
影响因子：
4.9
通讯作者：
Solzbacher, Florian
中科院分区：
文献类型：
--
作者：
Kim, Sohee;Tathireddy, Prashant;Solzbacher, Florian
长期可植入的无线神经接口装置将需要将电子电路与接口微电极集成，以消除有线连接。由于集成电路（IC）会消耗一定量的功率，因此它会提高植入周围组织的温度。本文通过有限元数值模拟和体内、体外实验研究了植入脑内的集成三维犹他州电极阵列（UEA）器件的热效应。数值计算和实验测量的温度增加，由于UEA注入是在良好的协议。经实验验证的数值模型预测，温度随UEA的功耗线性增加，在预期使用的功耗水平上斜率为0.029 ℃/mW。血液灌注，脑代谢，和UEA的几何形状对组织加热的影响也进行了研究，使用的数值模型。
A chronically implantable, wireless neural interface device will require integrating electronic circuitry with the interfacing microelectrodes in order to eliminate wired connections. Since the integrated circuit (IC) dissipates a certain amount of power, it will raise the temperature in surrounding tissues where it is implanted. In this paper, the thermal influence of the integrated 3-D Utah electrode array (UEA) device implanted in the brain was investigated by numerical simulation using finite element analysis (FEA) and by experimental measurement in vitro as well as in vivo. The numerically calculated and experimentally measured temperature increases due to the UEA implantation were in good agreement. The experimentally validated numerical model predicted that the temperature increases linearly with power dissipation through the UEA, with a slope of 0.029 degrees C/mW over the power dissipation levels expected to be used. The influences of blood perfusion, brain metabolism, and UEA geometry on tissue heating were also investigated using the numerical model.