Growth orientation of the tin whiskers on an electrodeposited Sn thin film under three-point bending
Growth orientation of the tin whiskers on an electrodeposited Sn thin film under three-point bending
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三点弯曲下电沉积Sn薄膜上锡晶须的生长取向
DOI：
10.1016/j.matlet.2009.04.006
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发表时间：
2009
期刊：
影响因子：
--
通讯作者：
Yu
中科院分区：
文献类型：
--
作者：
Chih;Yu
为了缓解电沉积锡层中的压应力，在室温下时效的锡层上形成了非晶态锡晶须。对电沉积锡层进行了三点弯曲试验，以研究在机械施加的拉伸应力下锡晶须的生长。在弯曲时受到拉伸应力的Sn层上，Sn晶须生长得到缓解。在高张应力区形成的Sn晶须的生长方向是随机的，但在低张应力区的方向。
To release the compressive stress in an as-electrodeposited tin (Sn) layer, filamentary Sn whiskers were formed on the layer aged at room temperature. A three-point bending test was performed on an electrodeposited Sn layer to investigate the Sn whisker growth under mechanically applied tensile stress. Sn whisker growth was mitigated on the Sn layer subjected to a tensile stress in bending. The growth orientation of the Sn whiskers formed on the high tensile stress region was random but directional on the low tensile stress region.