On the non-monotonic lateral size dependence of the height of GaAs nanowhiskers grown by molecular beam epitaxy at high temperature
On the non-monotonic lateral size dependence of the height of GaAs nanowhiskers grown by molecular beam epitaxy at high temperature
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DOI：
10.1002/pssb.200409042
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发表时间：
2004-06-01
影响因子：
1.6
通讯作者：
Ustinov, VM
中科院分区：
文献类型：
--
作者：
Dubrovskii, VG;Soshnikov, IP;Ustinov, VM
在表面温度为585 ℃下，用分子束外延法在Au活化的GaAs（111）B表面上生长了GaAs纳米晶须。研究了Au-GaAs合金液滴尺寸对纳米晶须高度的影响。结果表明，在一定的最小液滴直径下，GaAs纳米晶须的高度为零，然后随着尺寸的增大而增大，在一定尺寸下有一个明显的最大值，随着晶须的变厚而减小，最后趋于某一渐近值。纳米晶须的生长动力学的理论模型，以解释所观察到的尺寸依赖性。GaAs纳米晶须高度的理论和实验数据的比较结果，并进行了分析。(C)2004 WILEY-VCH Verlag GmbH & Co. KGaA，魏因海姆。
GaAs nanowhiskers were grown by molecular beam epitaxy on the GaAs(111)B surface activated by Au at the surface temperature of 585 degreesC. The dependence of nanowhisker height on the size of Au-GaAs alloy drops was investigated. It has been found that the height of GaAs nanowhiskers is zero at a certain minimum diameter of drop, then increases with size, has a pronounced maximum at a certain size, decreases for thicker whiskers and finally goes to a certain asymptotic value. The theoretical model for the growth kinetics of nanowhiskers was developed in order to explain the observed size dependence. The results of comparison of theoretical and experimental data for the height of GaAs nanowhiskers are presented and analyzed. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.