Microwave noise in AlGaN/GaN channels
Microwave noise in AlGaN/GaN channels
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DOI：
10.1049/ip-cds:20040199
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发表时间：
2004-04
期刊：
影响因子：
--
通讯作者：
A. Matulionis;J. Liberis
中科院分区：
文献类型：
--
作者：
A. Matulionis;J. Liberis
综述了非掺杂AlGaN/GaN沟道微波噪声的最新研究进展。在二维电子气中，噪声被施加在电子限制平面上的电场搅动。实验结果与蒙特卡罗模拟和简单的半经验公式进行了比较。强调了热声子效应的重要性。
Recent investigation of microwave noise of nominally undoped AlGaN/GaN channels is reviewed. The noise is agitated in a two-dimensional electron gas by an electric field applied in the plane of electron confinement. The experimental results are compared with those of Monte Carlo simulation and with simple semi-empirical formulas. The importance of hot-phonon effects is emphasised.