Diffused back surface field formation in combination with two-step H2 annealing for improvement of silicon nanowire-based solar cell efficiency
Diffused back surface field formation in combination with two-step H2 annealing for improvement of silicon nanowire-based solar cell efficiency
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DOI：
10.7567/jjap.56.04cp01
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发表时间：
2017-01
影响因子：
1.5
通讯作者：
W. Jevasuwan;K. Pradel;T. Subramani;Junyi Chen;T. Takei;K. Nakajima;Y. Sugimoto;N. Fukata
中科院分区：
文献类型：
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作者：
W. Jevasuwan;K. Pradel;T. Subramani;Junyi Chen;T. Takei;K. Nakajima;Y. Sugimoto;N. Fukata
基于硅纳米线 (SiNW) 的太阳能电池制造采用扩散背表面场 (BSF) 形成和两步氢气退火相结合的方式开发，以提高效率。通过金属催化化学蚀刻和纳米压印以及博世工艺合成的两种不同的n-SiNW结构被用作基板，以制造具有化学气相沉积生长的p-Si壳层的单结太阳能电池。在不形成 BSF 的情况下，优化了使用两步氢气退火制造的纳米压印 SiNW 太阳能电池的壳层覆盖范围，并使用透射电子显微镜研究了氢气退火对壳层结晶度的影响。然后，观察不同退火时间下结合H2退火工艺与壳层处理对BSF形成的影响。两种基于 SiNW 的太阳能电池的绝对效率均提高了约 1.5%。通过 BSF 层减少载流子复合，同时降低 n-SiNW 表面和 p-Si 层内部的缺陷密度。
Silicon nanowire (SiNW)-based solar cell fabrication was developed using a combination of diffused back surface field (BSF) formation and two-step H2 annealing for greater efficiency enhancement. Two different n-SiNW structures synthesized by metal-catalyzed electroless etching and nanoimprinting followed by Bosch process were used as substrates to fabricate single-junction solar cells with chemical vapor deposition grown p-Si shell layer. Without BSF formation, shell layer coverage of nanoimprinted SiNW solar cells fabricated using two-step H2 annealing was optimized and the H2 annealing effect on the shell layer crystallinity was investigated using transmission electron microscopy. Then, the effects of combined H2 annealing process for BSF formation together with shell layer treatment were observed under various annealing times. Enhancement of ∼1.5% absolute efficiency of both SiNW-based solar cells was achieved. Reduction of carrier recombination by BSF layer accompanied with the reduction of the defect density on n-SiNW surfaces and inside p-Si layer could be accomplished.