Mechanisms for highly ionized magnetron sputtering
Mechanisms for highly ionized magnetron sputtering
复制标题
高电离磁控溅射机理
DOI：
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发表时间：
1995
期刊：
影响因子：
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通讯作者：
F. Qian
中科院分区：
文献类型：
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作者：
J. Hopwood;F. Qian
提出了高密度等离子体溅射金属电离的简单模型。实验上，通过将铝溅射到致密等离子体区域 (ne∼1012 cm−3) 可以获得大于 80% 的离子通量分数。这种工艺在填充微电子制造中遇到的高深宽比特征方面具有重要的应用。该模型考虑了电子碰撞和潘宁电离机制。在低电子密度（ne<1011 cm−3）的条件下，潘宁电离被发现是主要的电离路径。这与传统二极管溅射的公认电离机制一致。然而，当产生高电子密度时，电子碰撞电离起着重要的电离作用。电感耦合等离子体的朗缪尔探针测量表明电子密度介于 2×1011 和 2×1012 cm−3 之间。该模型与测量的等离子体密度相结合，用于计算离子分数。建模和经验...
A simple model for ionization of sputtered metals by a high‐density plasma is presented. Experimentally, ion flux fractions of greater than 80% can be obtained by sputtering aluminum into a region of dense plasma (ne∼1012 cm−3). Such a process has important applications in the filling of high‐aspect‐ratio features encountered in microelectronics fabrication. Both electron‐impact and Penning ionization mechanisms are considered in this model. Under conditions of low electron density (ne≪1011 cm−3), Penning ionization is found to be the dominant ionization path. This is consistent with the accepted ionization mechanism for conventional diode sputtering. When high electron densities are generated, however, electron‐impact ionization plays a significant ionization role. Langmuir probe measurements of the inductively coupled plasma indicate that the electron density lies between 2×1011 and 2×1012 cm−3. The model, in combination with measured plasma density, is used to calculate ion fractions. Modeled and exper...