Characterization of topologically close-packed phases in secondary reaction zone in a coated CMSX-4 single crystal Ni-based superalloy
Characterization of topologically close-packed phases in secondary reaction zone in a coated CMSX-4 single crystal Ni-based superalloy
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DOI：
10.1007/s10853-012-6840-1
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发表时间：
2013-02
影响因子：
4.5
通讯作者：
X. Tan;H. Hong;B. Choi;I. S. Kim;C. Jo;T. Jin;Z. Hu
中科院分区：
文献类型：
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作者：
X. Tan;H. Hong;B. Choi;I. S. Kim;C. Jo;T. Jin;Z. Hu
研究了热障涂层合金CMSX-4中二次反应区（SRZ）的拓扑密排（TCP）沉淀。采用选区电子衍射（SAED）和高角环形暗场（HAADF）分析了三个不同区域（包括SRZ、晶界和基底）中的TCP沉淀物。结果表明，SRZ与基体之间的界面为大角度晶界，取向差约为51°。晶界处的TCP沉淀物对SRZ的生长有抑制作用。SAED结果表明，TCP析出相主要为断裂或孪晶μ相。此外，还发现了P相与μ相的共生现象。
The topologically close-packed (TCP) precipitation in the secondary reaction zone (SRZ) in a thermal barrier coated alloy CMSX-4 has been investigated. The selected area electron diffraction (SAED) and high-angle annular dark field (HAADF) were used to analyze the TCP precipitates in the three different regions (including the SRZ, grain boundaries, and substrate) in this study. It was found that the interface between the SRZ and substrate was a high-angle grain boundary with a misorientation of ~51°. The TCP precipitates at the grain boundaries could inhibit the growth of SRZ. The SAED results indicate that most TCP precipitates were the faulted or twinned μ phase. In addition, the intergrowth of P phase with μ phase was found.