Sn12Sb88 material for phase change memory
Sn12Sb88 material for phase change memory
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DOI：
10.1063/1.3184787
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发表时间：
2009-07
影响因子：
4
通讯作者：
F. Rao;Zhitang Song;K. Ren;Xuelai Li;Liangcai Wu;W. Xi;Bo Liu
中科院分区：
文献类型：
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作者：
F. Rao;Zhitang Song;K. Ren;Xuelai Li;Liangcai Wu;W. Xi;Bo Liu
基于SN12SB88膜的相变存储单元显示了高电阻状态和低电阻状态之间的可逆相变能力。我们计算了Crystalline SNSB材料的共振特征，这证明SNSB是潜在的相变候选者。 SN12SB88是合适的组合物，具有更快的结晶速度，更高的结晶温度和更大的结晶激活能量，但熔点比GE2SB2TE5材料的熔点更低。因此，与基于GE2SB2TE5的单元格相比，使用此组合物使用此组合物的相变存储单元能够显示出更快的设置操作速度，更好的数据保留能力以及更低的复位功耗。
Phase change memory cell based on Sn12Sb88 film shows reversible phase change abilities between high and low resistance states. We calculate the resonance character of crystalline SnSb material, which proves that SnSb is a potential phase change candidate. Sn12Sb88 is the suitable composition that has faster crystallization speed, higher crystallization temperature, and larger crystallization activation energy but lower melting point than those of Ge2Sb2Te5 material. Hence, phase change memory cell using this composition is able to show quicker set operation speed, better data retention ability, and lower reset power consumption than those of the Ge2Sb2Te5 based cell.