Direct-write trilayer technology for Al–Al2O3–Cu superconductor-insulator-normal metal tunnel junction fabrication
Direct-write trilayer technology for Al–Al2O3–Cu superconductor-insulator-normal metal tunnel junction fabrication
复制标题
用于Al-Al2O3-Cu超导体-绝缘体-普通金属隧道结制造的直写三层技术
DOI：
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发表时间：
2007
期刊：
影响因子：
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通讯作者：
L. Kuzmin
中科院分区：
文献类型：
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作者：
E. Otto;M. Tarasov;L. Kuzmin
作者提出了一种用于测辐射热计和测温应用的新型直写三层膜技术。该技术的第一步是超导电极的原位蒸发，然后是氧化，然后是普通对电极，第二步是沉积正常金属吸收材料。这种方法允许人们实现隧道结和吸收体的任何几何形状，而不受限制。结点或吸收体的大小，这在阴影蒸发技术中是不可能的。提出的新方法非常适合于制造用于高精度测量的新一代望远镜的微波接收器，如三叶草地面望远镜和Olimpo气球望远镜项目。在300mK下进行的测量表明，制作的隧道结质量高，漏电流低，在该温度下获得了500的Rd/Rn比。这些结被表征为温度传感器，电压与温度的关系测量表明，每个单结的dv/dt为0.5 mV/K，这是这类隧道结的典型特征。(C)2007年美国真空协会。
The authors present a novel direct-write trilayer technology for bolometer and thermometry applications. The technology is based on in situ evaporation of the superconductive electrode followed by the oxidation and the normal counterelectrode as a first step and deposition of normal-metal absorber as a second one. This approach allows one to realize any geometry of the tunnel junctions and of the absorber with no limitation related to. the size of the junctions or the absorber, which is not possible using shadow evaporation technique. The proposed new approach is perfectly suited for fabrication of microwave receivers for high-precision measurements in new generation of telescopes such as CLOVER ground-based telescope and OLIMPO balloon telescope projects. Measurements performed at 300 mK showed high quality of fabricated tunnel junctions, low leakage currents, and Rd/Rn ratio of 500 has been achieved at that temperature. The junctions were characterized as temperature sensors, and voltage versus temperature dependence measurements have shown a dV/dT of 0.5 mV/K for each single junction, which is typical for this kind of tunnel junctions. (c) 2007 American Vacuum Society.