Plasma-Enhanced Chemical Vapor Deposition of Acetylene on Codeposited Bimetal Catalysts Increasing Graphene Sheet Continuity Under Low-Temperature Growth Conditions
Plasma-Enhanced Chemical Vapor Deposition of Acetylene on Codeposited Bimetal Catalysts Increasing Graphene Sheet Continuity Under Low-Temperature Growth Conditions
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DOI：
10.1186/s11671-019-3156-y
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发表时间：
2019-10-28
影响因子：
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通讯作者：
Jiao, Jun
中科院分区：
文献类型：
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作者：
Tracy, Joshua;Zietz, Otto;Jiao, Jun
在这里，我们报告了一种在多晶双金属 Ni-Au 催化剂上在 450 摄氏度低温合成单层石墨烯的新方法。在这项研究中，在 450 摄氏度的共沉积 Ni-Au 上进行了石墨烯的低温化学气相沉积合成，结果表明无需额外的退火过程即可成功形成单层石墨烯。实验结果表明，双金属催化剂的电子束共沉积是能够消除石墨烯合成之前催化剂生长前高温退火的关键程序，这是之前报道中使用的不可或缺的过程。通过等离子体辅助生长进一步改善了形成过程，其中感应耦合等离子体电离碳前体，在 450 摄氏度下与厚度为 50 nm 的共沉积 Ni-Au 催化剂相互作用。这些组合生长条件大大提高了石墨烯片的均匀性和面积连通性，从 11.6% 增加到 99%。这些制造参数使得石墨烯的形成能够从基于体扩散的生长模型转变为基于表面的反应。这里报道的技术为石墨烯的低温生长提供了可能在未来 CMOS 应用中使用的机会。
Here, we report a novel method for low-temperature synthesis of monolayer graphene at 450 degrees C on a polycrystalline bimetal Ni-Au catalyst. In this study, low-temperature chemical vapor deposition synthesis of graphene was performed at 450 degrees C on codeposited Ni-Au which shows successful monolayer graphene formation without an extra annealing process. The experimental results suggest that electron beam codeposition of bimetal catalyst is the key procedure that enables the elimination of the pre-growth high-temperature annealing of the catalyst prior to graphene synthesis, an indispensable process, used in previous reports. The formation was further improved by plasma-assisted growth in which the inductively coupled plasma ionizes the carbon precursors that interact with codeposited Ni-Au catalyst of 50 nm in thickness at 450 degrees C. These combined growth conditions drastically increase the graphene's sheet uniformity and area connectivity from 11.6% to 99%. These fabrication parameters enable the graphene formation that shifts from a bulk diffusion-based growth model towards a surface based reaction. The technique reported here opens the opportunity for the low-temperature growth of graphene for potential use in future CMOS applications.