Transport property of an organic conductor α-(BEDT-TTF)2I3 under high pressure: Discovery of a novel type of conductor
Transport property of an organic conductor α-(BEDT-TTF)2I3 under high pressure: Discovery of a novel type of conductor
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有机导体α-(BEDT-TTF)2I3在高压下的输运特性：新型导体的发现
DOI：
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发表时间：
2000
期刊：
影响因子：
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通讯作者：
Y. Iye
中科院分区：
文献类型：
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作者：
N. Tajima;M. Tamura;Y. Nishio;K. Kajita;Y. Iye
我们在高压下发现了有机晶体α-（BEDT-TTF）_2I_3中的一种全新的输运现象。本质上，它是一种半金属或窄隙半导体。但是，输运性质是特殊的。这种载流子（空穴）密度和迁移率的电导率变化约6个数量级。它们以一种方式变化，使得效应正好抵消，从而产生与温度无关的电导率。在低温下，系统处于高迁移率（3 × 105 cm 2 /V·sec）和低载流子密度（5 × 1015 cm-3）的状态。已经发现这种状态对磁场非常敏感。我们提出了一个机制的载流子密度的温度依赖性非常强。它以能带结构为基础，考虑了热效应。
We have found quite a new type of transport phenomenon in an organic crystal α-(BEDT-TTF) 2 I 3 under high pressure. Essentially, it is a semimetal or a narrow gap semiconductor. But, the transport property is peculiar. The conductivity of this the carrier (hole) density and mobility change by a about 6 orders of magnitude. They change in a manner so that the effects just cancel out giving rise to the temperature independent conductivity. At low temperatures, the system is in a state with high mobility (3 ×10 5 cm 2 /V·sec) and low carrier density (5 ×10 15 cm -3 ). This state has been found to be very sensitive to magnetic field. We propose a mechanism for the extremely strong temperature dependence of the carrier density. It is based on the band structure and takes the thermal effect into consideration.