Oxygen-vacancy-related dielectric relaxations in SrTiO3 at high temperatures
Oxygen-vacancy-related dielectric relaxations in SrTiO3 at high temperatures
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DOI：
10.1063/1.4794349
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发表时间：
2013-03-07
影响因子：
3.2
通讯作者：
Li, Y. D.
中科院分区：
文献类型：
--
作者：
Wang, C. C.;Lei, C. M.;Li, Y. D.
我们在这里进行了对陶瓷和单晶体SRTIO3样品在室温到1073 K温度下的介电性能的比较研究。在两个样品中都观察到了两种弛豫。它们在陶瓷和单晶样品中的表现分别为Debye样和放松的松弛。发现这些放松是与氧相关的大量效应。在单晶样品中，弛豫是由与单一充电氧空位相关的远程传导引起的。在陶瓷样品中，与晶体相关的氧空位更为强烈。这导致了在空缺之前的氧气空位簇的形成和解离的新现象。陶瓷样品中的低温弛豫是通过氧空位的聚类和分离过程来确定的。发现陶瓷样品中的高温松弛共享与单晶样品中相同的机制。 （c）2013美国物理研究所。 [http://dx.doi.org/10.1063/1.4794349]
We herein present comparative investigation on the dielectric properties of both ceramic and single crystal SrTiO3 samples in the temperature from room temperature to 1073 K. Two relaxations were observed in both samples. They behave as Debye-like and relaxor-like relaxations in ceramic and single crystal samples, respectively. These relaxations were found to be bulk effect related to oxygen-vacancy. In single crystal sample, the relaxations result from the long-range conduction associated with singly and doubly charged oxygen vacancies. In ceramic sample, the oxygen vacancies are more strongly localized in relation to the crystal. This leads to a new phenomenon of formation and dissociation of oxygen vacancy clusters before the vacancies make contribution to the long-range conduction. The low-temperature relaxation in ceramic sample was determined by the clustering and dissociating processes of the oxygen vacancies. The high-temperature relaxation in ceramic sample was found to share the same mechanism as that in the single crystal sample. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4794349]