Source mask optimization based on design pattern library at 7nm technology node
Source mask optimization based on design pattern library at 7nm technology node
复制标题
7nm技术节点基于设计模式库的源掩模优化
DOI：
10.1117/12.2584716
复制
发表时间：
2021-02
期刊：
影响因子：
--
通讯作者：
Rui Chen
中科院分区：
文献类型：
--
作者：
Xiaojing Su;Lisong Dong;Yayi Wei;Tianyang Gai;Yajuan Su;Rui Chen
在7 nm技术节点，通过多个图案化技术结合193台浸没式扫描仪，可以实现批量生产。自由形状照明源的应用是使用193 nm 1.35NA浸没式光刻进行持续收缩的关键因素。源和掩模优化(SMO)是优化满足要求的自由形状源的重要分辨率增强技术(RET)。设计模式库可以用来认知、管理和比较所有不断变化和迭代的物理设计。我们提出的方法可以利用颜色后设计图案库和图案选择方法来提高SMO的性能。工艺窗口限制器是优化SMO工艺参数的重要指导。
It is possible to achieve mass production by multiple patterning technology combing with 193 immersion scanners at 7nm technology node. The application of freeform illumination source shapes is a key enabler for continued shrink using 193 nm immersion lithography with 1.35 NA. Source and mask optimization (SMO) is the important resolution enhancement technique (RET) to optimize a satisfied freeform source. Design pattern library can be used to cognize, manage and compare all the continuous changing and iterative physical designs. Our proposed methodology can improve SMO performance by taking advantages of post-color design pattern library and pattern selection method. And process window limiters are the important guidance to optimize parameters of SMO.