Reversed truncated cone composition distribution of In0.8Ga0.2As quantum dots overgrown by an In0.1Ga0.9As layer in a GaAs matrix
Reversed truncated cone composition distribution of In0.8Ga0.2As quantum dots overgrown by an In0.1Ga0.9As layer in a GaAs matrix
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GaAs 基质中 In0.1Ga0.9As 层过度生长的 In0.8Ga0.2As 量子点的反转截锥成分分布
DOI：
10.1063/1.1533109
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发表时间：
2002
影响因子：
4
通讯作者：
M. Dähne
中科院分区：
文献类型：
--
作者：
A. Lenz;R. Timm;H. Eisele;C. Hennig;S. K. Becker;R. Sellin;U. W. Pohl;D. Bimberg;M. Dähne
给出了用金属有机化学气相沉积方法制备的In_(0.8)Ga_(0.2)As自组织量子点被In0.1Ga_(0.9As)膜覆盖的横截面扫描隧道显微镜结果。从具有原子分辨率的量子点的图像中，我们确定了反截锥形状的量子点内In组分的空间分布。润湿层和外延生长的In0.1Ga0.9As层呈垂直混合。
We present cross-sectional scanning tunneling microscopy results of self-organized In0.8Ga0.2As quantum dots covered by an In0.1Ga0.9As film inside a GaAs matrix prepared by metalorganic chemical vapor deposition. From images of quantum dots with atomic resolution, we determine a spatial distribution of the In composition within the dots with a shape of a reversed truncated cone. The wetting layer and the overgrown In0.1Ga0.9As layer show vertical intermixing.