Inorganic block copolymer lithography
Inorganic block copolymer lithography
复制标题
DOI：
10.1016/j.polymer.2012.11.057
复制
发表时间：
2013-02
期刊：
影响因子：
4.6
通讯作者：
A. Nunns;J. Gwyther;I. Manners
中科院分区：
文献类型：
--
作者：
A. Nunns;J. Gwyther;I. Manners
嵌段共聚物光刻，其中嵌段共聚物自组装与常规光刻图案化集成的工艺，正在成为解决半导体工业未来需求的有前途的技术。嵌段共聚物自组装成有序纳米域的能力允许简单、低成本的纳米图案化到下面的基底中。自其最初的概念，嵌段共聚物光刻已被证明使用各种嵌段共聚物，研究主要集中在全有机二嵌段共聚物。最显著的例子是聚苯乙烯-嵌段-聚（甲基丙烯酸甲酯）（PS-b-PMMA），其中纳米畴的长程有序已经允许在商业规模上应用。然而，由有机嵌段共聚物的自组装产生的特征尺寸的按比例缩小通常由于相对低的Flory-Huggins相互作用参数χ而受到限制。此外，嵌段之间的蚀刻选择性以及它们对于后续图案转移步骤的抗蚀刻性通常较低。这篇综述文章概述了如何将含有无机元素的链段引入嵌段共聚物中有助于解决这些问题，并且还可以直接沉积金属纳米颗粒等功能材料。这导致了对下一代嵌段共聚物光刻应用的潜在兴趣。
Block copolymer lithography, a process where block copolymer self-assembly is integrated with conventional lithographic patterning, is emerging as a promising technology for addressing the future needs of the semiconductor industry. The ability of block copolymers to self-assemble into ordered nanodomains allows for simple, low cost nanopatterning into underlying substrates. Since its initial conception, block copolymer lithography has been demonstrated using a variety of block copolymers, with research primarily focusing on all-organic diblock copolymers. The most notable example is polystyrene-block-poly(methyl methacrylate) (PS-b-PMMA) where long-range ordering of nanodomains has allowed applications on a commercial scale. However, scaling down of the feature sizes produced from the self-assembly of organic block copolymers is often limited due to the relatively low Flory-Huggins interaction parameter, χ. In addition, etch selectivity between the blocks, and their etch resistance for subsequent pattern transfers steps, is generally low. This review article provides an overview of how the introduction of segments containing inorganic elements into block copolymers can help to address these issues and can also allow the direct deposition of functional materials such as metal nanoparticles. This has led to potential interest for the next generation of block copolymer lithography applications.