Solution-processable, niobium-doped titanium oxide nanorods for application in low-voltage, large-area electronic devices
Solution-processable, niobium-doped titanium oxide nanorods for application in low-voltage, large-area electronic devices
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DOI：
10.1039/c7tc04197g
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发表时间：
2018-02
影响因子：
6.4
通讯作者：
F. Alharthi;F. Cheng;E. Verrelli;N. Kemp;A. Lee;M. Isaacs;M. O'Neill;S. Kelly
中科院分区：
文献类型：
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作者：
F. Alharthi;F. Cheng;E. Verrelli;N. Kemp;A. Lee;M. Isaacs;M. O'Neill;S. Kelly
首次报道了以油酸为结构导向剂和稳定剂，通过钛(OIPR)4和乙醇Nb(V)的水解缩合，在锐钛矿相中一步合成了可溶液处理的高结晶度掺Nb的二氧化钛(Nb-TiO2)纳米棒。这些新型的表面稳定的纳米棒可以很容易地以相对较高的浓度(∼10%)分散在普通溶剂中，并以均匀、薄和透明的薄膜形式沉积在平面衬底上，用于制造电子器件。所合成的纳米颗粒的小尺寸代表着在获得足够光滑的高k介电薄膜方面的重要进展，以适用于OFET应用和一般塑料电子领域。初步研究表明，掺Nb(7.1wt%)二氧化钛纳米棒在100 kHz-1 MHz频率范围内的介电常数k比相应的未掺杂二氧化钛纳米棒的介电常数k大三分之一(k>；8)。这些器件的电流-电压(J-V)行为表明，掺Nb改善了这些器件的泄漏电流，从而防止了包含这些新纳米棒的器件的硬电介质击穿。
We report for the first time the one-step synthesis of solution-processable, highly crystalline, niobium-doped titanium dioxide (Nb-TiO2) nanorods in the anatase phase by the hydrolytic condensation of Ti(OiPr)4 and niobium(V) ethoxide using oleic acid as a structure-directing and stabilising agent. These novel surface-stabilised nanorods can be easily dispersed in common solvents at relatively high concentration (∼10%) and deposited as uniform, thin and transparent films on planar substrates for the fabrication of electronic devices. The small size of the nanoparticles synthesized represents an important advance in achieving high-k dielectric thin films smooth enough to be suitable for OFET applications and the plastic electronics filed in general. Preliminary investigations show that the dielectric constant, k, of niobium-doped (7.1 wt%) titanium dioxide (Nb-TiO2) nanorods at frequencies in the region of 100 kHz–1 MHz, are more a third greater (k > 8) than that (k = 6) determined for the corresponding undoped titanium dioxide (TiO2) nanorods. The current–voltage (J–V) behaviour of these devices reveal that niobium-doping improves, by reducing, the leakage current of these devices, thereby preventing hard dielectric breakdown of devices incorporating these new nanorods.