Material and optical properties of low-temperature NH3-free PECVD SiNx layers for photonic applications
Material and optical properties of low-temperature NH3-free PECVD SiNx layers for photonic applications
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DOI：
10.1088/1361-6463/50/2/025106
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发表时间：
2017-01-18
影响因子：
3.4
通讯作者：
Gardes, Frederic Y.
中科院分区：
文献类型：
--
作者：
Bucio, Thalia Dominguez;Khokhar, Ali Z.;Gardes, Frederic Y.
用于光子应用的SiNx层通常使用LPCVD和PECVD来制造。这些技术依赖于高温处理（>400摄氏度）来获得低传播损耗。先前证明了在低于400摄氏度的温度下沉积的PECVD SiNx层的替代版本（无NH3 PECVD）是制造具有传播损耗的条形波导的良好选择
SiNx layers intended for photonic applications are typically fabricated using LPCVD and PECVD. These techniques rely on high-temperature processing (>400 degrees C) to obtain low propagation losses. An alternative version of PECVD SiNx layers deposited at temperatures below 400 degrees C with a recipe that does not use ammonia (NH3-free PECVD) was previously demonstrated to be a good option to fabricate strip waveguides with propagation losses