Broadband tunable InAs/InP quantum dot external-cavity laser emitting around 1.55 μm.
Broadband tunable InAs/InP quantum dot external-cavity laser emitting around 1.55 μm.
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DOI：
10.1364/oe.23.018493
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发表时间：
2015-07
期刊：
影响因子：
3.8
通讯作者：
F. Gao;S. Luo;H. Ji;X. Yang;P. Liang;T. Yang
中科院分区：
文献类型：
--
作者：
F. Gao;S. Luo;H. Ji;X. Yang;P. Liang;T. Yang
本文报道了一种基于金属有机气相外延生长的InAs/InP量子点（QDs）的宽带可调谐外腔激光器。研究发现，在QD沉积后的中断过程中，高的AsH 3流量极大地促进了QD的成熟，提高了QD活性介质在低能态的光学增益。结合抗反射/高反射facet涂层，实现了宽可调谐的InAs/InP QD外腔激光器，其调谐范围为140.4 nm，波长范围为1436.6 nm至1577 nm，最大输出功率为6 mW。
We report a broadband tunable external-cavity laser based on InAs/InP quantum dots (QDs) grown by metal-organic vapor phase epitaxy. It is found that high AsH₃ flow during the interruption after QD deposition greatly promotes QD ripening, which improves the optical gain of QD active medium in lower energy states. Combined with anti-reflection/high-reflection facet coatings, a broadly tunable InAs/InP QD external-cavity laser was realized with a tuning range of 140.4 nm across wavelengths from 1436.6 nm to 1577 nm at a maximum output power of 6 mW.