Atom lithography with two-dimensional optical masks
Atom lithography with two-dimensional optical masks
复制标题
使用二维光学掩模的原子光刻
DOI：
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发表时间：
2004
期刊：
影响因子：
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通讯作者：
W. Vassen
中科院分区：
文献类型：
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作者：
S. Petra;K. V. van Leeuwen;L. Feenstra;W. Hogervorst;W. Vassen
利用λ=1083 nm的二维（2D）光学掩模，首次在使用亚稳态氦原子的原子光刻工艺中创建纳米级图案。原子的内能用于局部破坏疏水抗蚀剂层，该疏水抗蚀剂层在湿法蚀刻工艺中被去除。已经用光学掩模的几种偏振进行了实验，得到不同的强度图案和相应的纳米级结构。线性偏振光场的结果显示了直径为260 nm的孔阵列，与计算图案一致。在圆偏振光场的情况下，观察到间距为λ/20.5=766 nm的线图案。考虑到许多可能的实验缺陷的模拟不能解释这种模式。
With a two-dimensional (2D) optical mask at λ=1083 nm, nanoscale patterns are created for the first time in an atom lithography process using metastable helium atoms. The internal energy of the atoms is used to locally damage a hydrophobic resist layer, which is removed in a wet etching process. Experiments have been performed with several polarizations for the optical mask, resulting in different intensity patterns, and corresponding nanoscale structures. The results for a linear polarized light field show an array of holes with a diameter of 260 nm, in agreement with a computed pattern. With a circularly polarized light field a line pattern is observed with a spacing of λ/20.5=766 nm. Simulations taking into account many possible experimental imperfections can not explain this pattern.