Complementary Germanium Electron–Hole Bilayer Tunnel FET for Sub-0.5-V Operation
Complementary Germanium Electron–Hole Bilayer Tunnel FET for Sub-0.5-V Operation
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DOI：
10.1109/led.2011.2175898
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发表时间：
2012-02
影响因子：
4.9
通讯作者：
L. Lattanzio;L. De Michielis;A. Ionescu
中科院分区：
文献类型：
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作者：
L. Lattanzio;L. De Michielis;A. Ionescu
在这封信中，我们提出了一种新的器件，锗电子空穴（EH）双层隧道场效应晶体管，它利用载流子隧穿通过偏压诱导的EH双层。所提出的架构提供了一个准理想的隧道路径和栅极控制的电场之间的对齐。通过二维数值模拟研究了器件的工作原理和性能。该器件在低工作电压方面具有有趣的特性（在六十个电流十年内AVG ~ 13 mV/dec），ION/IOFF比~ 109，VDD = 0.5 V时驱动电流ION ~ 10 μA/μm。具有对称电压的相同结构可用于实现具有与n型相当的ION和IOFF电平的p型器件，这使得能够直接实现互补逻辑，当VDD = 0.25 V时，理论上可以达到1.39 GHz的最大工作频率。
In this letter, we present a novel device, the germanium electron-hole (EH) bilayer tunnel field-effect transistor, which exploits carrier tunneling through a bias-induced EH bilayer. The proposed architecture provides a quasi-ideal alignment between the tunneling path and the electric field controlled by the gate. The device principle and performances are studied by 2-D numerical simulations. This device allows interesting features in terms of low operating voltage (AVG ~ 13 mV/dec over six decades of current), ION/IOFF ratio of ~ 109, and drive current of ION ~ 10 μA/μm at VDD = 0.5 V. The same structure with symmetric voltages can be used to achieve a p-type device with ION and IOFF levels comparable to the n-type, which enables a straightforward implementation of complementary logic that could theoretically reach a maximum operating frequency of 1.39 GHz when VDD = 0.25 V.