SiGe-channel n-MOSFET by germanium implantation
SiGe-channel n-MOSFET by germanium implantation
复制标题
注入锗的 SiGe 沟道 n-MOSFET
DOI：
--
复制
发表时间：
1991
影响因子：
4.9
通讯作者：
B. Hecht
中科院分区：
文献类型：
--
作者：
C. Selvakumar;B. Hecht
报道了第一个采用高剂量锗注入和固相外延技术制备的n-SiGe沟道MOSFET。在同一芯片上制作了多晶硅栅MOSFET和传统的多晶硅栅n-MOSFET，并比较了它们的电特性。SiGe沟道MOSFET与硅沟道MOSFET相比显示出一些显著更好的电特性。例如，SiGe MOSFET在SiGe区中显示出更高的漏极电导和更高的整体SiGe。SiGe MOSFET的阈值电压似乎更小，沟道中的载流子迁移率似乎更高。<<ETX>>
The first n-SiGe-channel MOSFETs fabricated using high-dose germanium implantation and solid-phase epitaxy are reported. The polysilicon-gate MOSFETs were fabricated in the same chip in which conventional polysilicon-gate n-MOSFETs were made and their electrical characteristics are compared. The SiGe-channel MOSFETs show some significantly better electrical characteristics as compared to the silicon-channel MOSFETs. For example, the SiGe MOSFETs show higher drain conductance in the triode region and higher transconductance overall. The threshold voltage of the SiGe MOSFET appears to be smaller and the carrier mobility in the channel appears to be higher.<<ETX>>